Annealing condition dependence of electrical characteristics for Dy2O3/Si(100) structures

Junichi Taguchi*, Hiroyuki Yamamoto, Junichi Tonotani, Shun Ichiro Ohmi, Hiroshi Iwai

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we report on the annealing condition dependence of electrical characteristics for Dy2O3 thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.

原文English
主出版物標題European Solid-State Device Research Conference
編輯Elena Gnani, Giorgio Baccarani, Massimo Rudan
發行者IEEE Computer Society
頁面591-594
頁數4
ISBN(電子)8890084782
DOIs
出版狀態Published - 2002
事件32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
持續時間: 24 九月 200226 九月 2002

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Conference

Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
國家/地區Italy
城市Firenze
期間24/09/0226/09/02

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