TY - GEN
T1 - Anisotropic thermal conductivity of nano-porous silica film
AU - Tsui, Bing-Yue
AU - Yang, Chen Chi
AU - Fang, Kuo Lung
N1 - Publisher Copyright:
© 2003 IEEE.
PY - 2003
Y1 - 2003
N2 - In this work thermal conductivity of porous silica film was studied comprehensively. Silica films with porosity from 21% to 64% were spin coated. It is observed for the first time that the porous silica material has strong anisotropic characteristic. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. We proposed a Serial-Parallel Hybrid model to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the RC delay simulation of the circuits.
AB - In this work thermal conductivity of porous silica film was studied comprehensively. Silica films with porosity from 21% to 64% were spin coated. It is observed for the first time that the porous silica material has strong anisotropic characteristic. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. We proposed a Serial-Parallel Hybrid model to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the RC delay simulation of the circuits.
UR - http://www.scopus.com/inward/record.url?scp=84944687236&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2003.1252600
DO - 10.1109/VTSA.2003.1252600
M3 - Conference contribution
AN - SCOPUS:84944687236
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 251
EP - 254
BT - VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
Y2 - 6 October 2003 through 8 October 2003
ER -