ANALYTICAL PERSPECTIVE OF LDD MOSFETS.

K. Mayaram*, J. Lee, T. Y. Chan, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.

原文English
頁(從 - 到)61-62
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
出版狀態Published - 1 12月 1986

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