ANALYTICAL PERSPECTIVE OF LDD MOSFETS.

K. Mayaram; J. Lee; T. Y. Chan; Chen-Ming Hu

ANALYTICAL PERSPECTIVE OF LDD MOSFETS.

K. Mayaram^*, J. Lee, T. Y. Chan, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.

原文	English
頁（從 - 到）	61-62
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
出版狀態	Published - 1 12月 1986

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title = "ANALYTICAL PERSPECTIVE OF LDD MOSFETS.",

abstract = "The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.",

author = "K. Mayaram and J. Lee and Chan, {T. Y.} and Chen-Ming Hu",

year = "1986",

month = dec,

day = "1",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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T1 - ANALYTICAL PERSPECTIVE OF LDD MOSFETS.

AU - Mayaram, K.

AU - Lee, J.

AU - Chan, T. Y.

AU - Hu, Chen-Ming

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.

AB - The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.

UR - http://www.scopus.com/inward/record.url?scp=0022890869&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0022890869

SP - 61

EP - 62

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

ER -

ANALYTICAL PERSPECTIVE OF LDD MOSFETS.

摘要

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