Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS

Ren Jia Chan, Jyh-Chyurn Guo

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (L dc∼150pH, Qmax∼17, fSR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

原文English
主出版物標題2014 IEEE MTT-S International Microwave Symposium, IMS 2014
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(列印)9781479938698
DOIs
出版狀態Published - 1 一月 2014
事件2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
持續時間: 1 六月 20146 六月 2014

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
ISSN(列印)0149-645X

Conference

Conference2014 IEEE MTT-S International Microwave Symposium, IMS 2014
國家/地區United States
城市Tampa, FL
期間1/06/146/06/14

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