Analytical model of subthreshold drain current characteristics of ballistic silicon nanowire transistors

Wanjie Xu, Hei Wong*, Hiroshi Iwai

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

原文English
文章編號605987
期刊Advances in Condensed Matter Physics
2015
DOIs
出版狀態Published - 2015

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