Analysis of thermal activation energy for poly-Si TFTs

Chao Chian Chiu*, Hsiao-Wen Zan, Er Kang Shaw

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The conduction behavior of Poly-Si TFTs had been carefully studied by analyzing their activation energy under different bias condition. It is found that the trapping effects dominate grain boundary barrier under small drain bias, while the DIGBL effect was pronounced under high drain bias. Considering both the trapping effects and the DIGBL effects, a new activation energy model has been proposed and verified. The cut-off region activation energy of devices with or without LDD structure was also compared in this paper. The influence of gate bias on leakage current was examined by device simulation results.

原文English
主出版物標題Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
編輯H.P. David Shieh, F.C. Chen
頁面533-536
頁數4
出版狀態Published - 2月 2005
事件International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
持續時間: 21 2月 200524 2月 2005

出版系列

名字International Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
國家/地區Japan
城市Taipei
期間21/02/0524/02/05

指紋

深入研究「Analysis of thermal activation energy for poly-Si TFTs」主題。共同形成了獨特的指紋。

引用此