Analysis of the short-term response in the drain current of a-IGZO TFT to light pulses

In this letter, the response in the drain current (ID) of the amorphous indium-gallium-zinc oxide thin-film transistors under positive-bias illumination stress is measured with respect to time in less than 5 s under light pulseswith altering frequencies and duty ratios. The curves of ID under the light pulses are affected by the different defect-reacting rates under illumination and in the dark. By taking the derivative of ID, the trend of the change in the number of defects becomes clear. The total behavior of ID in response to light pulses can be fairly predicted by the integral of the derivative terms with a correction factor of charge trapping.