TY - GEN
T1 - Analysis of the scaling effect on NAND flash memory cell operation
AU - Shirot, R.
AU - Watanabe, Hiroshi
PY - 2013
Y1 - 2013
N2 - In recent years, the enormous success of NAND Flash memory technology in realizing multi-gigabyte memory chips has evidently triggered a lot of difficulties concerning its cell operation, such as parasitic neighbouring cell coupling, FN-tunnelling statistics, Vt distribution widening by RTN, et al. In this paper, two kinds of phenomena are shown. One is the increase of the interface state density after write/erase cycles, which will degrades the sub-threshold swing (SS) of the memory cell in the NAND string. The other is the increase of the programmed Vt distribution after programming, which also reduces the cell operation margin. It is revealed that Vt distribution widening closely depends on the floating gate doping concentration of Phosphorus. These phenomena become more serious as cell size smaller.
AB - In recent years, the enormous success of NAND Flash memory technology in realizing multi-gigabyte memory chips has evidently triggered a lot of difficulties concerning its cell operation, such as parasitic neighbouring cell coupling, FN-tunnelling statistics, Vt distribution widening by RTN, et al. In this paper, two kinds of phenomena are shown. One is the increase of the interface state density after write/erase cycles, which will degrades the sub-threshold swing (SS) of the memory cell in the NAND string. The other is the increase of the programmed Vt distribution after programming, which also reduces the cell operation margin. It is revealed that Vt distribution widening closely depends on the floating gate doping concentration of Phosphorus. These phenomena become more serious as cell size smaller.
UR - http://www.scopus.com/inward/record.url?scp=84885747366&partnerID=8YFLogxK
U2 - 10.1149/05034.0027ecst
DO - 10.1149/05034.0027ecst
M3 - Conference contribution
AN - SCOPUS:84885747366
SN - 9781607684220
T3 - ECS Transactions
SP - 27
EP - 35
BT - Nonvolatile Memories
PB - Electrochemical Society Inc.
T2 - Symposium on Nonvolatile Memories - 22nd ECS Meeting/PRiME 2012
Y2 - 7 October 2012 through 12 October 2012
ER -