Analysis of the scaling effect on NAND flash memory cell operation

R. Shirot, Hiroshi Watanabe

研究成果: Conference contribution同行評審

摘要

In recent years, the enormous success of NAND Flash memory technology in realizing multi-gigabyte memory chips has evidently triggered a lot of difficulties concerning its cell operation, such as parasitic neighbouring cell coupling, FN-tunnelling statistics, Vt distribution widening by RTN, et al. In this paper, two kinds of phenomena are shown. One is the increase of the interface state density after write/erase cycles, which will degrades the sub-threshold swing (SS) of the memory cell in the NAND string. The other is the increase of the programmed Vt distribution after programming, which also reduces the cell operation margin. It is revealed that Vt distribution widening closely depends on the floating gate doping concentration of Phosphorus. These phenomena become more serious as cell size smaller.

原文English
主出版物標題Nonvolatile Memories
發行者Electrochemical Society Inc.
頁面27-35
頁數9
版本34
ISBN(列印)9781607684220
DOIs
出版狀態Published - 2013
事件Symposium on Nonvolatile Memories - 22nd ECS Meeting/PRiME 2012 - Honolulu, HI, 美國
持續時間: 7 10月 201212 10月 2012

出版系列

名字ECS Transactions
號碼34
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceSymposium on Nonvolatile Memories - 22nd ECS Meeting/PRiME 2012
國家/地區美國
城市Honolulu, HI
期間7/10/1212/10/12

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