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Analysis of strain relaxation in GaAsInGaAsGaAs structures by spectroscopy of relaxation-induced states
Jenn-Fang Chen
*
, C. H. Chiang, P. C. Hsieh, J. S. Wang
*
此作品的通信作者
電子物理學系
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:
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9
引文 斯高帕斯(Scopus)
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Keyphrases
Gallium Arsenide
100%
Strain Relaxation
100%
Induced State
100%
Transient Capacitance
40%
Activation Energy
20%
Energy Difference
20%
InGaAs
20%
Logarithmic Function
20%
Threading Dislocation
20%
Conduction Band Offset
20%
Misfit Dislocation
20%
Carrier Depletion
20%
Spatial Location
20%
Exponential Transient
20%
Strain Relaxation Mechanism
20%
Engineering
Strain Relaxation
100%
Gallium Arsenide
60%
Transients
40%
Gaas Layer
40%
Activation Energy
20%
Energy Difference
20%
Indium Gallium Arsenide
20%
Threading Dislocation
20%
Band Offset
20%
Misfit Dislocation
20%
Spatial Location
20%
Conduction Band
20%
Material Science
Gallium Arsenide
100%
Capacitance
40%
Activation Energy
20%
Indium Gallium Arsenide
20%
Band Offset
20%
Point Defect
20%
Dislocation (Crystal)
20%
Earth and Planetary Sciences
Conduction Band
100%
Point Defect
100%