Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling

Pei-Wen Li*, W. M. Liao

*此作品的通信作者

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Short-channel effects of Si 1-xGe x p-channel MOSFETs have been examined by two-dimensional computer simulation. It is found that devices incorporating SiGe channel offer worthwhile advantages in device performance and scalability. In addition to enhanced drive current due to higher hole mobility, Si 1-xGe x p-channel MOSFETs also provide better carrier confinement in the Si/SiGe quantum well, which leads to lower gate-controlled depletion charge and electric field in the subsurface. These in turn suppress the drain-induced barrier lowering and punch through effects in SiGe pMOSFETs compared to the bulk Si devices at the same physical dimension. Higher device performance and better scalability make Si 1-xGe x p-channel MOSFETs a great benefit for high-speed and low-power CMOS circuit applications.

原文English
頁(從 - 到)39-44
頁數6
期刊Solid-State Electronics
46
發行號1
DOIs
出版狀態Published - 1 1月 2002

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