Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

T. Okumura*, King-Ning Tu

*此作品的通信作者

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43 引文 斯高帕斯(Scopus)

摘要

A differential analysis of internal photoemission spectroscopy has been developed for the study of nonuniformity in a Schottky contact. The analysis is capable of revealing the presence of a high-low parallel contact in a spectroscopic manner. It has been applied to a discrete parallel contact consisting of Pd2Si and NiSi as well as a nonuniform contact of Pd on Si in the as-deposited state. The nonuniformity in the latter case is due to the existence of high barrier regions (0.86 eV) in parallel to those of Pd 2Si (0.74 eV) and it disappears after a subsequent annealing at 250 or 450°C.

原文English
頁(從 - 到)922-927
頁數6
期刊Journal of Applied Physics
54
發行號2
DOIs
出版狀態Published - 1 12月 1983

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