@inproceedings{99cf39d94c1845efa6fb0a0192d32574,
title = "Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling",
abstract = "TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.",
author = "Yu, {Kuan Chin} and Fan, {Ming Long} and Pin Su and Chuang, {Ching Te}",
year = "2015",
month = jun,
day = "3",
doi = "10.1109/VLSI-TSA.2015.7117588",
language = "English",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015",
address = "美國",
note = "2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 ; Conference date: 27-04-2015 Through 29-04-2015",
}