Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn-Fang Chen; Nie Chuan Chen; Wen Yen Huang; Wei-I Lee; Ming Shiann Feng

doi:10.1143/JJAP.35.L810

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn-Fang Chen^*, Nie Chuan Chen, Wen Yen Huang, Wei-I Lee, Ming Shiann Feng

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

原文	English
頁（從 - 到）	L810-L812
頁數	3
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	35
發行號	7 PART A
DOIs	https://doi.org/10.1143/JJAP.35.L810
出版狀態	Published - 1 7月 1996

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title = "Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method",

abstract = "The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.",

keywords = "Deep levels, GaN, OMVPE, Transient capacitance",

author = "Jenn-Fang Chen and Chen, {Nie Chuan} and Huang, {Wen Yen} and Wei-I Lee and Feng, {Ming Shiann}",

year = "1996",

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doi = "10.1143/JJAP.35.L810",

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T1 - Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

AU - Chen, Jenn-Fang

AU - Chen, Nie Chuan

AU - Huang, Wen Yen

AU - Lee, Wei-I

AU - Feng, Ming Shiann

PY - 1996/7/1

Y1 - 1996/7/1

N2 - The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

AB - The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

KW - Deep levels

KW - GaN

KW - OMVPE

KW - Transient capacitance

UR - http://www.scopus.com/inward/record.url?scp=0030189722&partnerID=8YFLogxK

U2 - 10.1143/JJAP.35.L810

DO - 10.1143/JJAP.35.L810

M3 - Article

AN - SCOPUS:0030189722

SN - 0021-4922

VL - 35

SP - L810-L812

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 7 PART A

ER -

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

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