Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Chiung Chih Hsu; Ray-Quen Hsu; Yue Han Wu; Tung Wei Chi; Chen Hao Chiang; Jenn-Fang Chen; Mao Nan Chang

doi:10.1016/j.ultramic.2008.04.098

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Chiung Chih Hsu^*, Ray-Quen Hsu, Yue Han Wu, Tung Wei Chi, Chen Hao Chiang, Jenn-Fang Chen, Mao Nan Chang

^*此作品的通信作者

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

原文	American English
頁（從 - 到）	1495-1499
頁數	5
期刊	Ultramicroscopy
卷	108
發行號	11
DOIs	https://doi.org/10.1016/j.ultramic.2008.04.098
出版狀態	Published - 1 10月 2008

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@article{990463560f4b4f4383c10218d6e14fa7,

title = "Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence",

abstract = "Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.",

keywords = "Molecular beam epitaxy, PL, Quantum dots, TEM",

author = "Hsu, {Chiung Chih} and Ray-Quen Hsu and Wu, {Yue Han} and Chi, {Tung Wei} and Chiang, {Chen Hao} and Jenn-Fang Chen and Chang, {Mao Nan}",

year = "2008",

month = oct,

day = "1",

doi = "10.1016/j.ultramic.2008.04.098",

language = "American English",

volume = "108",

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journal = "Ultramicroscopy",

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TY - JOUR

T1 - Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

AU - Hsu, Chiung Chih

AU - Hsu, Ray-Quen

AU - Wu, Yue Han

AU - Chi, Tung Wei

AU - Chiang, Chen Hao

AU - Chen, Jenn-Fang

AU - Chang, Mao Nan

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

AB - Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

KW - Molecular beam epitaxy

KW - PL

KW - Quantum dots

KW - TEM

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U2 - 10.1016/j.ultramic.2008.04.098

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M3 - Article

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AN - SCOPUS:52949102532

SN - 0304-3991

VL - 108

SP - 1495

EP - 1499

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 11

ER -

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

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