Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices

This research explores the electrical characteristics of the unity gain frequency (F_t) in relation to the experimental in-line process parameters of 16-nm high-κ metal gate bulk fin-type field effect transistor devices. Because F_t is dependent on the transconductance (G_m) and effective gate capacitance (C_gg), a sensitivity analysis of these two factors is applied to determine key in-line process parameters. The engineering results of this letter indicate that G_m and C_gg are significantly fluctuated by six in-line process parameters, including the gate length, fin height, high-κ/interfacial layer thickness, source/drain (S/D) proximity, S/D depth, and gate height. These six parameters fluctuate F_t at the same time, with G_m as the dominant factor.