Analysis of formation of hafnium silicide on silicon

C. J. Kircher*, J. W. Mayer, King-Ning Tu, J. F. Ziegler

*此作品的通信作者

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species.

原文English
頁(從 - 到)81-83
頁數3
期刊Applied Physics Letters
22
發行號2
DOIs
出版狀態Published - 1 十二月 1973

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