Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs

Abhishek Kumar; Girish Pahwa; Amit Kumar Behera; Anand Bulusu; Shruti Mehrotra; Avirup Dasgupta

doi:10.1109/ICEE56203.2022.10118175

Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs

Abhishek Kumar, Girish Pahwa, Amit Kumar Behera, Anand Bulusu, Shruti Mehrotra, Avirup Dasgupta

國際半導體產業學院

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.

原文	English
主出版物標題	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665491853
DOIs	https://doi.org/10.1109/ICEE56203.2022.10118175
出版狀態	Published - 2022
事件	2022 IEEE International Conference on Emerging Electronics, ICEE 2022 - Bangalore, 印度持續時間: 11 12月 2022 → 14 12月 2022

出版系列

名字	2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Conference

Conference	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
國家/地區	印度
城市	Bangalore
期間	11/12/22 → 14/12/22

存取文件

10.1109/ICEE56203.2022.10118175

其它文件與鏈接

Link to publication in Scopus

引用此

Kumar, A., Pahwa, G., Behera, A. K., Bulusu, A., Mehrotra, S., & Dasgupta, A. (2022). Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs. 於 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 (2022 IEEE International Conference on Emerging Electronics, ICEE 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEE56203.2022.10118175

@inproceedings{f19fad2fb0054b0c8abea69fc6ecfd0d,

title = "Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs",

abstract = "This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.",

keywords = "Compact Model, Ferroelectric-FinFETs, Flicker Noise",

author = "Abhishek Kumar and Girish Pahwa and Behera, {Amit Kumar} and Anand Bulusu and Shruti Mehrotra and Avirup Dasgupta",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 ; Conference date: 11-12-2022 Through 14-12-2022",

year = "2022",

doi = "10.1109/ICEE56203.2022.10118175",

language = "English",

series = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",

address = "美國",

}

Kumar, A, Pahwa, G, Behera, AK, Bulusu, A, Mehrotra, S & Dasgupta, A 2022, Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs. 於 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Bangalore, 印度, 11/12/22. https://doi.org/10.1109/ICEE56203.2022.10118175

Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs. / Kumar, Abhishek; Pahwa, Girish; Behera, Amit Kumar 等.
2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs

AU - Kumar, Abhishek

AU - Pahwa, Girish

AU - Behera, Amit Kumar

AU - Bulusu, Anand

AU - Mehrotra, Shruti

AU - Dasgupta, Avirup

PY - 2022

Y1 - 2022

N2 - This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.

AB - This paper presents an in-depth analysis of the flicker noise (1/f noise) in Field Effect Transistors (FETs) with ferroelectric gate stack. The analysis is valid for all ferroelectric FETs (FeFETs). We have also proposed an enhancement to industry standard flicker noise models to take ferroelectric thickness into account.

KW - Compact Model

KW - Ferroelectric-FinFETs

KW - Flicker Noise

UR - http://www.scopus.com/inward/record.url?scp=85160553942&partnerID=8YFLogxK

U2 - 10.1109/ICEE56203.2022.10118175

DO - 10.1109/ICEE56203.2022.10118175

M3 - Conference contribution

AN - SCOPUS:85160553942

T3 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

BT - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Y2 - 11 December 2022 through 14 December 2022

ER -

Kumar A, Pahwa G, Behera AK, Bulusu A, Mehrotra S, Dasgupta A. Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs. 於 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022). doi: 10.1109/ICEE56203.2022.10118175

Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此