TY - GEN
T1 - Analysis and Design of Stacked-Nanosheet FeFET Synapse Conductance Response under Identical Pulse Scheme for Neuromorphic Applications
AU - Lin, Heng Li
AU - Su, Pin
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - This work investigates and analyzes the synapse response under the identical gate pulse stimulation scheme for Stacked-Nanosheet FeFET by using Monte Carlo nucleation-limited-switching (NLS) based model. Our study indicates that thinner EOT of interfacial layer and smaller saturated polarization (Ps) can be used to improve the linearity and symmetry of GDS due to smaller depolarization field. In addition, Stacked-Nanosheet structure can increase effective W/L without footprint penalty to boost G/Gmin.
AB - This work investigates and analyzes the synapse response under the identical gate pulse stimulation scheme for Stacked-Nanosheet FeFET by using Monte Carlo nucleation-limited-switching (NLS) based model. Our study indicates that thinner EOT of interfacial layer and smaller saturated polarization (Ps) can be used to improve the linearity and symmetry of GDS due to smaller depolarization field. In addition, Stacked-Nanosheet structure can increase effective W/L without footprint penalty to boost G/Gmin.
KW - Stacked-Nanosheet FeFET
KW - Synapse and Depolarization Field
UR - http://www.scopus.com/inward/record.url?scp=85158154965&partnerID=8YFLogxK
U2 - 10.1109/EDTM55494.2023.10102967
DO - 10.1109/EDTM55494.2023.10102967
M3 - Conference contribution
AN - SCOPUS:85158154965
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Y2 - 7 March 2023 through 10 March 2023
ER -