@inproceedings{1e2f07ad1f8648bf8d557719101f587d,
title = "Analysis and Design of InGaAs Negative-Capacitance FinFETs considering Quantum Capacitance",
abstract = "This work analyzes and optimizes the design with emphasis on the inversion charge characteristics for InGaAs negative-capacitance FinFETs (NC-FinFETs) by using theoretical calculation corroborated with numerical simulation. Our study indicates that, optimized ferroelectric remnant-polarization (Pr) for InGaAs devices can be chosen by the capacitance matching at the optimized sub-band of the inversion capacitance. In addition, the optimized sub-band is different for the InGaAs devices with different fin-width. The Pr optimization of the InGaAs device is also different from the Si device. After the optimization, the quantum-capacitance induced inversion charge loss for InGaAs devices can be mitigated from ∼2.4X to ∼1.1X due to the action of negative capacitance.",
keywords = "CMOS, InGaAs, Negative-capacitance FET, Quantum capacitance",
author = "Huang, {Shih En} and Lin, {Shih Han} and Pin Su",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731312",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "20--22",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "美國",
}