@inproceedings{b715a253f35a4953847c013962e429da,
title = "An X- to Ka-band Single-Pole-Double-Throw Switch with Good Power Handling Capability",
abstract = "In this paper, we present a single-pole-double-throw (SPDT) switch design covering X- to Ka-band using series-shunt topology. The stacked-FET configuration was adopted for the series- and shunt-arms to enhance the power handling capability. The number of cells in the stacked-FET configuration was optimized for the best performance across the band of interest. Implemented using 0.15-μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology provided by WIN Semiconductor, the measured performance showed a maximum insertion loss of 3.2 dB, a minimum isolation of 27 dB, and a minimum input P1dB of 33 dBm with good impedance match at all the ports from 8 to 40 GHz.",
keywords = "GaAs pHEMT, Series-shunt, SPDT switch, Stacked-FET",
author = "Tsao, {Yi Fan} and Yuan Wang and Tsao, {Chien Ming} and Wurfl, {Hans Joachim} and Hsu, {Heng Tung}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 ; Conference date: 28-11-2021 Through 01-12-2021",
year = "2021",
doi = "10.1109/APMC52720.2021.9661627",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "229--231",
booktitle = "2021 IEEE Asia-Pacific Microwave Conference, APMC 2021",
address = "United States",
}