An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces

Haydn Chen*, G. E. White, S. R. Stock, P. S. Ho

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The domain structures of palladium and Pd2Si as well as their crystallographic relationship to the silicon substrates were determined on Si(111) and Si(100) samples by mapping X-ray diffraction pole figures. X-ray diffraction topography and rocking curve measurements were carried out for the silicon substrates in order to detect the presence of elastic and/or plastic deformation in the substrates caused by silicide formation. The stresses in the silicide films were determined from the bending of the silicon substrates using X-ray diffraction techniques.

原文English
頁(從 - 到)161-169
頁數9
期刊Thin Solid Films
93
發行號1-2
DOIs
出版狀態Published - 9 7月 1982

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