An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)

Mao Yuan Chiu, Chen Chia Chen, Jeng-Tzong Sheu, Kung-Hwa Wei*

*此作品的通信作者

研究成果: Article同行評審

43 引文 斯高帕斯(Scopus)

摘要

An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (-10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes.

原文American English
頁(從 - 到)769-774
頁數6
期刊Organic Electronics
10
發行號5
DOIs
出版狀態Published - 1 一月 2009

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