TY - JOUR
T1 - An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate
AU - Chen, S. C.
AU - Lou, J. C.
AU - Chien, Chao-Hsin
AU - Liu, Po-Tsun
AU - Chang, T. C.
PY - 2005/9/22
Y1 - 2005/9/22
N2 - In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.
AB - In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.
KW - Dielectrics
KW - Electrical properties and measurements
KW - Surface and interface state
KW - Transmission electron microscopy (TEM)
UR - http://www.scopus.com/inward/record.url?scp=23044473424&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2005.01.023
DO - 10.1016/j.tsf.2005.01.023
M3 - Article
AN - SCOPUS:23044473424
SN - 0040-6090
VL - 488
SP - 167
EP - 172
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -