TY - GEN
T1 - An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model
AU - Singhal, Anant
AU - Gill, Garima
AU - Pahwa, Girish
AU - Hu, Chenming
AU - Agarwal, Harshit
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.
AB - Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.
KW - BSIM-BULK
KW - Gummel Symmetry test
KW - Harmonic Balance test
KW - LDMOS
UR - http://www.scopus.com/inward/record.url?scp=85158135307&partnerID=8YFLogxK
U2 - 10.1109/EDTM55494.2023.10103122
DO - 10.1109/EDTM55494.2023.10103122
M3 - Conference contribution
AN - SCOPUS:85158135307
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Y2 - 7 March 2023 through 10 March 2023
ER -