An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model

Anant Singhal, Garima Gill, Girish Pahwa, Chenming Hu, Harshit Agarwal

研究成果: Conference contribution同行評審

摘要

Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around Vds=OV, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.

原文English
主出版物標題7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350332520
DOIs
出版狀態Published - 2023
事件7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
持續時間: 7 3月 202310 3月 2023

出版系列

名字7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區Korea, Republic of
城市Seoul
期間7/03/2310/03/23

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