An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

Wei Lee*, Pin Su, Hou Yu Chen, Chang Yun Chang, Ke Wei Su, Sally Liu, Fu Liang Yang

*此作品的通信作者

    研究成果: Conference contribution › 同行評審

    指紋

    深入研究「An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature」主題。共同形成了獨特的指紋。