An Anti-Ambipolar Cryo-Phototransistor

Roshan Jesus Mathew, Kai-Hsiang Cheng, Christy Roshini Paul Inbaraj, Raman Sankar, Xuan P.A. Gao*, Yit-Tsong Chen*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Novel anti-ambipolar transistors (AATs) are gate tunable rectifiers with a marked potential for multi-valued logic circuits. In this work, the optoelectronic applications of AATs in cryogenic conditions are studied, of which the AAT devices consist of vertically stacked p-SnS and n- MoSe2
nanoflakes to form a type-II staggered band alignment. An electrostatically tunable p-SnS/n-MoSe2 cryo-phototransistor is presented with unique anti-ambipolar characteristics and cryogenic-enhanced optoelectronic performance. The cryo-phototransistor exhibits a sharp and highly symmetric anti-ambipolar transfer curve at 77 K with the peak-to-valley ratio of 103
operating under a low bias voltage of 1 V. The high cooling-enhanced charge mobilities in the cryo-phototransistor grant this AAT device remarkable photodetection capabilities. At 77 K, the p-SnS/n-MoSe2 cryo-phototransistor,holding a broad photoresponse in the spectral range of 250−900 nm,demonstrates its high responsivity of 2 × 104 A W−1 and detectivity of
7.5 × 1013 Jones with the excitation at 532 nm. The high-performance p-SnS/n-MoSe2 low-dimensional phototransistor with low operating voltages at 77−150 K is eligible for optoelectronic applications in cryogenic environments. Furthermore, the cryo-characteristics of this heterostructure can be further extended to design the mul-tivalued logic circuits operated in
cryogenic conditions.
原文American English
期刊Advanced Electronic Materials
出版狀態Published - 28 5月 2023

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