An analytical model for the power bipolar-MOS transistor

Engineering & Materials Science

• Analytical models 69%
• Bipolar transistors 100%
• Carrier lifetime 42%
• Current density 26%
• Electric potential 27%
• Electron mobility 42%
• Epitaxial films 41%
• Experiments 19%
• Hole mobility 44%
• Insulated gate bipolar transistors (IGBT) 29%
• MOSFET devices 94%
• Power transistors 35%

Chemical Compounds

• Buffer Solution 26%
• Current Density 29%
• Drop 70%
• Electron Mobility 48%
• Epitaxial Film 57%
• Hole Mobility 48%
• Time 29%
• Voltage 58%

Physics & Astronomy

• buffers 17%
• carrier lifetime 21%
• current density 14%
• electric potential 21%
• electron mobility 20%
• hole mobility 23%
• transistors 64%