An analytical model for the power bipolar-MOS transistor

Engineering & Materials Science

• Bipolar transistors 100%
• MOSFET devices 94%
• Analytical models 69%
• Hole mobility 44%
• Carrier lifetime 42%
• Electron mobility 42%
• Epitaxial films 41%
• Power transistors 35%
• Insulated gate bipolar transistors (IGBT) 29%
• Electric potential 27%
• Current density 26%
• Experiments 19%

Chemical Compounds

• Drop 70%
• Voltage 58%
• Epitaxial Film 57%
• Electron Mobility 48%
• Hole Mobility 48%
• Current Density 29%
• Time 29%
• Buffer Solution 26%

Physics & Astronomy

• transistors 64%
• hole mobility 23%
• electric potential 21%
• carrier lifetime 21%
• electron mobility 20%
• buffers 17%
• current density 14%