An Alternative Way for Reconfigurable Logic-in-Memory with Ferroelectric FET

Wei Xiang You, Bo Kai Huang, Pin Su*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Single ferroelectric-FET (FeFET) reconfigurable logic-in-memory is an attractive beyond-von-Neumann scheme for data-centric computing. Different from using body-to-source voltage to tune the operating point of the FeFET for reconfigurability, this brief presents an alternative approach based on the unique ferroelectric minor-loop behavior (which results from the partial switching of domains). Through simulation, we show that the NAND/ NOR reconfigurability can theoretically be achieved by adequately modulating the reference and writing pulses for the FeFET nonvolatile memory (NVM). Our approach may serve as an option when the body-effect capability is lacking for nonplanar FeFETs or 3-D stacked FeFETs which can be crucial to future high-density integration.

原文English
頁(從 - 到)444-446
頁數3
期刊IEEE Transactions on Electron Devices
69
發行號1
DOIs
出版狀態Published - 1 1月 2022

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