An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

Keyphrases

• Hot Carrier Reliability 100%
• NMOSFET 100%
• Reliability Evaluation 100%
• Thin Gate Oxide 100%
• Deep Submicron 100%
• Reliability Monitor 100%
• Degradation Model 50%
• Scattering Effect 50%
• Effective Channel Length 50%
• Impact Ionization Coefficients 50%
• Gate Engineering 50%
• Substrate Current 50%
• Engineering Studies 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Reliability Evaluation 100%
• Gate Oxide 100%
• Shallower 100%
• Degradation Model 50%
• Channel Length 50%
• Engineering 50%
• Scattering Effect 50%
• Effective Channel 50%
• Ionization Rate 50%
• Impact Ionization 50%

Earth and Planetary Sciences

• State of the Art 100%