@inproceedings{6091961594fb4b2e856d437800d8d2fb,
title = "An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's",
abstract = "In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.",
author = "Chung, {Steve S.} and Chen, {S. J.} and Yih, {C. M.} and Yang, {W. J.} and Tien-Sheng Chao",
year = "1999",
month = jan,
day = "1",
doi = "10.1109/RELPHY.1999.761621",
language = "English",
isbn = "0780352203",
series = "Annual Proceedings - Reliability Physics (Symposium)",
publisher = "IEEE",
pages = "249--252",
booktitle = "Annual Proceedings - Reliability Physics (Symposium)",
note = "null ; Conference date: 23-03-1999 Through 25-03-1999",
}