An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET

Jyh-Chyurn Guo, C. C.H. Hsu, Pole Shang Lin, Steve S. Chung

研究成果: Conference contribution同行評審

9 引文 斯高帕斯(Scopus)

摘要

A novel "decoupled C-V " technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET's. This method successfully DECOUPLES channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.

原文English
主出版物標題1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
發行者Institute of Electrical and Electronics Engineers Inc.
頁面256-260
頁數5
ISBN(電子)0780309782
DOIs
出版狀態Published - 1 1月 1993
事件1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
持續時間: 12 5月 199314 5月 1993

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN(列印)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
國家/地區Taiwan
城市Taipei
期間12/05/9314/05/93

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