An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications

Chin Te Wang; Chien I. Kuo; Wee Chin Lim; Li Han Hsu; Heng-Tung Hsu; Yasuyuki Miyamoto; Edward Yi Chang; Szu Ping Tsai; Yu Sheng Chiu

doi:10.1109/ICIPRM.2010.5516317

An 80 nm In_0.7Ga_0.3As MHEMT with flip-chip packaging for W-band low noise applications

Chin Te Wang^*, Chien I. Kuo, Wee Chin Lim, Li Han Hsu, Heng-Tung Hsu, Yasuyuki Miyamoto, Edward Yi Chang, Szu Ping Tsai, Yu Sheng Chiu

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

摘要

The fabrication process of an 80 nm In_0.7Ga_0.3As MHEMT device with flip-chip packaging on Al₂O₃ substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I_DS = 425 mA/mm and high g_m = 970 mS/mm at V_DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF_min)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In_0.7Ga_0.3As MHEMT device for low noise applications at W-band.

原文	English
主出版物標題	2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
頁面	325-328
頁數	4
DOIs	https://doi.org/10.1109/ICIPRM.2010.5516317
出版狀態	Published - 2010
事件	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, 日本持續時間: 31 5月 2010 → 4 6月 2010

出版系列

名字	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN（列印）	1092-8669

Conference

Conference	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
國家/地區	日本
城市	Kagawa
期間	31/05/10 → 4/06/10

存取文件

10.1109/ICIPRM.2010.5516317

其它文件與鏈接

Link to publication in Scopus

引用此

Wang, C. T., Kuo, C. I., Lim, W. C., Hsu, L. H., Hsu, H.-T., Miyamoto, Y., Chang, E. Y., Tsai, S. P., & Chiu, Y. S. (2010). An 80 nm In_0.7Ga_0.3As MHEMT with flip-chip packaging for W-band low noise applications. 於 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (頁 325-328). 文章 5516317 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516317

@inproceedings{a546965e98cd47e399805fa4053c91ea,

title = "An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications",

abstract = "The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.",

keywords = "Flip-chip, HEMTs, InGaAs-channel",

author = "Wang, {Chin Te} and Kuo, {Chien I.} and Lim, {Wee Chin} and Hsu, {Li Han} and Heng-Tung Hsu and Yasuyuki Miyamoto and Chang, {Edward Yi} and Tsai, {Szu Ping} and Chiu, {Yu Sheng}",

year = "2010",

doi = "10.1109/ICIPRM.2010.5516317",

language = "English",

isbn = "9781424459209",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "325--328",

booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",

note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",

}

Wang, CT, Kuo, CI, Lim, WC, Hsu, LH, Hsu, H-T, Miyamoto, Y, Chang, EY, Tsai, SP & Chiu, YS 2010, An 80 nm In_0.7Ga_0.3As MHEMT with flip-chip packaging for W-band low noise applications. 於 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516317, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 頁 325-328, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, 日本, 31/05/10. https://doi.org/10.1109/ICIPRM.2010.5516317

An 80 nm In_0.7Ga_0.3As MHEMT with flip-chip packaging for W-band low noise applications. / Wang, Chin Te; Kuo, Chien I.; Lim, Wee Chin 等.
2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 325-328 5516317 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications

AU - Wang, Chin Te

AU - Kuo, Chien I.

AU - Lim, Wee Chin

AU - Hsu, Li Han

AU - Hsu, Heng-Tung

AU - Miyamoto, Yasuyuki

AU - Chang, Edward Yi

AU - Tsai, Szu Ping

AU - Chiu, Yu Sheng

PY - 2010

Y1 - 2010

N2 - The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.

AB - The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.

KW - Flip-chip

KW - HEMTs

KW - InGaAs-channel

UR - http://www.scopus.com/inward/record.url?scp=77955936431&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2010.5516317

DO - 10.1109/ICIPRM.2010.5516317

M3 - Conference contribution

AN - SCOPUS:77955936431

SN - 9781424459209

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 325

EP - 328

BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings

T2 - 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010

Y2 - 31 May 2010 through 4 June 2010

ER -

Wang CT, Kuo CI, Lim WC, Hsu LH, Hsu HT, Miyamoto Y 等. An 80 nm In_0.7Ga_0.3As MHEMT with flip-chip packaging for W-band low noise applications. 於 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 325-328. 5516317. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2010.5516317