An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications

Chin Te Wang*, Chien I. Kuo, Wee Chin Lim, Li Han Hsu, Heng-Tung Hsu, Yasuyuki Miyamoto, Edward Yi Chang, Szu Ping Tsai, Yu Sheng Chiu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.

原文English
主出版物標題2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
頁面325-328
頁數4
DOIs
出版狀態Published - 30 8月 2010
事件22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
持續時間: 31 5月 20104 6月 2010

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
國家/地區Japan
城市Kagawa
期間31/05/104/06/10

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