An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Chun Chi Chen; Chia-Ming Tsai; Li Ren Huang

An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Chun Chi Chen^*, Chia-Ming Tsai, Li Ren Huang

^*此作品的通信作者

電子研究所

研究成果: Paper › 同行評審

2 引文斯高帕斯（Scopus）

摘要

An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10^-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

原文	English
頁面	313-316
頁數	4
出版狀態	Published - 2004
事件	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, 台灣持續時間: 6 12月 2004 → 9 12月 2004

Conference

Conference	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
國家/地區	台灣
城市	Tainan
期間	6/12/04 → 9/12/04

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Link to publication in Scopus

引用此

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title = "An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode",

abstract = "An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.",

author = "Chen, {Chun Chi} and Chia-Ming Tsai and Huang, {Li Ren}",

year = "2004",

language = "English",

pages = "313--316",

note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology ; Conference date: 06-12-2004 Through 09-12-2004",

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TY - CONF

T1 - An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

AU - Chen, Chun Chi

AU - Tsai, Chia-Ming

AU - Huang, Li Ren

PY - 2004

Y1 - 2004

N2 - An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

AB - An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

UR - http://www.scopus.com/inward/record.url?scp=13444271924&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:13444271924

SP - 313

EP - 316

T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology

Y2 - 6 December 2004 through 9 December 2004

ER -

An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

摘要

Conference

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