An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Chun Chi Chen*, Chia-Ming Tsai, Li Ren Huang

*此作品的通信作者

研究成果: Paper同行評審

2 引文 斯高帕斯(Scopus)

摘要

An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

原文English
頁面313-316
頁數4
出版狀態Published - 2004
事件2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
持續時間: 6 12月 20049 12月 2004

Conference

Conference2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
國家/地區Taiwan
城市Tainan
期間6/12/049/12/04

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