Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Hsiao-Hsuan Hsu, Ping Chiou, Chun-Hu Cheng, Shiang Shiou Yen, Chien-Hung Tung, Chun-Yen Chang, Chien Yu Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm(2)/V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.
原文English
頁(從 - 到)506-511
頁數6
期刊IEEE/OSA Journal of Display Technology
11
發行號6
DOIs
出版狀態Published - 六月 2015

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