Amorphous InGaZnO thin-film transistors compatible with roll-to-roll fabrication at room temperature

Ming Jiue Yu; Yung Hui Yeh; Chun Cheng Cheng; Chang Yu Lin; Geng Tai Ho; Benjamin Chih Ming Lai; Chyi Ming Leu; Tuo-Hung Hou; Yi Jen Chan

doi:10.1109/LED.2011.2170809

Amorphous InGaZnO thin-film transistors compatible with roll-to-roll fabrication at room temperature

Ming Jiue Yu^*, Yung Hui Yeh, Chun Cheng Cheng, Chang Yu Lin, Geng Tai Ho, Benjamin Chih Ming Lai, Chyi Ming Leu, Tuo-Hung Hou, Yi Jen Chan

^*此作品的通信作者

研究成果: Article › 同行評審

50 引文斯高帕斯（Scopus）

摘要

High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm ²V• s, the threshold voltage is-1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10 ⁵. The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.

原文	English
文章編號	6071028
頁（從 - 到）	47-49
頁數	3
期刊	IEEE Electron Device Letters
卷	33
發行號	1
DOIs	https://doi.org/10.1109/LED.2011.2170809
出版狀態	Published - 1 1月 2012

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10.1109/LED.2011.2170809

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abstract = "High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm 2V• s, the threshold voltage is-1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10 5. The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.",

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AU - Ho, Geng Tai

AU - Lai, Benjamin Chih Ming

AU - Leu, Chyi Ming

AU - Hou, Tuo-Hung

AU - Chan, Yi Jen

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Amorphous InGaZnO thin-film transistors compatible with roll-to-roll fabrication at room temperature

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