Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

Hsiao-Wen Zan; Wei Tsung Chen; Hsiu Wen Hsueh; Shih Chin Kao; Ming Che Ku; Chuang Chuang Tsai; Hsin-Fei Meng

doi:10.1063/1.3517506

Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

Hsiao-Wen Zan^*, Wei Tsung Chen, Hsiu Wen Hsueh, Shih Chin Kao, Ming Che Ku, Chuang Chuang Tsai, Hsin-Fei Meng

^*此作品的通信作者

研究成果: Article › 同行評審

89 引文斯高帕斯（Scopus）

摘要

This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

原文	English
文章編號	203506
期刊	Applied Physics Letters
卷	97
發行號	20
DOIs	https://doi.org/10.1063/1.3517506
出版狀態	Published - 15 11月 2010

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abstract = "This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.",

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AU - Zan, Hsiao-Wen

AU - Chen, Wei Tsung

AU - Hsueh, Hsiu Wen

AU - Kao, Shih Chin

AU - Ku, Ming Che

AU - Tsai, Chuang Chuang

AU - Meng, Hsin-Fei

PY - 2010/11/15

Y1 - 2010/11/15

N2 - This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

AB - This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

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