Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

Hsiao-Wen Zan*, Wei Tsung Chen, Hsiu Wen Hsueh, Shih Chin Kao, Ming Che Ku, Chuang Chuang Tsai, Hsin-Fei Meng

*此作品的通信作者

研究成果: Article同行評審

84 引文 斯高帕斯(Scopus)

摘要

This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

原文English
文章編號203506
期刊Applied Physics Letters
97
發行號20
DOIs
出版狀態Published - 15 11月 2010

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