@inproceedings{ffed93ac696945d996f56b6e81362056,
title = "Amorphous In 2 O 3 -Based thin film transistors fabricated by low-thermal budget process with high mobility and transparency",
abstract = " In this work, the influence of annealing on In-W-O (a-IWO) TFTs was investigated. The 100°C-annealed a-IWO TFTs exhibited an optimized performance with mobility of 39.16 cm 2 /Vs. Owing to the energy from annealing process, the structural relaxation can be enhanced leading to a better electrical characteristic of a-IWO TFTs. ",
keywords = "Low-thermal budget, Oxygen vacancies (V ), Transparent Amorphous Oxide Semiconductor (TAOS)",
author = "Chang, {Chih Hsiang} and Fuh, {Chur Shyang} and Chang, {Chih Jui} and Chang, {Che Chia} and Yeh, {Xiu Yun} and Po-Tsun Liu and Lin, {Hsin Hua} and Fang, {Kuo Lung} and Kao, {Yih Chyun} and Lee, {Chih Lung} and Shih, {Po Li} and Chang, {Wei Chih} and Lu, {I. Min}",
year = "2014",
month = jan,
day = "1",
language = "English",
series = "21st International Display Workshops 2014, IDW 2014",
publisher = "Society for Information Display",
pages = "221--224",
booktitle = "21st International Display Workshops 2014, IDW 2014",
address = "United States",
note = "null ; Conference date: 03-12-2014 Through 05-12-2014",
}