Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers

Po-Tsun Liu; Yi Teh Chou; Li Feng Teng; Fu Hai Li; Chur Shyang Fuh; Han Ping D. Shieh

doi:10.1109/LED.2011.2163181

Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers

Po-Tsun Liu^*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Chur Shyang Fuh, Han Ping D. Shieh

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

47 引文斯高帕斯（Scopus）

摘要

A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

原文	English
文章編號	5995139
頁（從 - 到）	1397-1399
頁數	3
期刊	IEEE Electron Device Letters
卷	32
發行號	10
DOIs	https://doi.org/10.1109/LED.2011.2163181
出版狀態	Published - 1 10月 2011

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10.1109/LED.2011.2163181

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title = "Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers",

abstract = "A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.",

keywords = "in situ back-channel passivation (BCP), InGaZnO (IGZO), nitrogenated InGaZnO (IGZO:N)",

author = "Po-Tsun Liu and Chou, {Yi Teh} and Teng, {Li Feng} and Li, {Fu Hai} and Fuh, {Chur Shyang} and Shieh, {Han Ping D.}",

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AU - Chou, Yi Teh

AU - Teng, Li Feng

AU - Li, Fu Hai

AU - Fuh, Chur Shyang

AU - Shieh, Han Ping D.

PY - 2011/10/1

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AB - A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

KW - in situ back-channel passivation (BCP)

KW - InGaZnO (IGZO)

KW - nitrogenated InGaZnO (IGZO:N)

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JF - IEEE Electron Device Letters

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Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO: N bilayer stack channel layers

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