A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.
|頁（從 - 到）||1397-1399|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 1 10月 2011|