AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang; K. H. Lee; P. C. Chang; Y. C. Wang; Cheng-Huang Kuo; S. L. Wu

doi:10.1109/JSEN.2008.2011070

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, Cheng-Huang Kuo, S. L. Wu

照明與能源光電研究所

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg_xN_y/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg_xN_y/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

原文	English
文章編號	4749393
頁（從 - 到）	87-92
頁數	6
期刊	IEEE Sensors Journal
卷	9
發行號	2
DOIs	https://doi.org/10.1109/JSEN.2008.2011070
出版狀態	Published - 1 2月 2009

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10.1109/JSEN.2008.2011070

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title = "AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer",

abstract = "AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",

keywords = "AlGaN/GaN heterostructure, Multi-MgN /GaN buffer, Schottky barrier photodetector",

author = "Chang, {S. J.} and Lee, {K. H.} and Chang, {P. C.} and Wang, {Y. C.} and Cheng-Huang Kuo and Wu, {S. L.}",

year = "2009",

month = feb,

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doi = "10.1109/JSEN.2008.2011070",

language = "English",

volume = "9",

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journal = "IEEE Sensors Journal",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

AU - Chang, S. J.

AU - Lee, K. H.

AU - Chang, P. C.

AU - Wang, Y. C.

AU - Kuo, Cheng-Huang

AU - Wu, S. L.

PY - 2009/2/1

Y1 - 2009/2/1

N2 - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

AB - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

KW - AlGaN/GaN heterostructure

KW - Multi-MgN /GaN buffer

KW - Schottky barrier photodetector

UR - http://www.scopus.com/inward/record.url?scp=68349154812&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2008.2011070

DO - 10.1109/JSEN.2008.2011070

M3 - Article

AN - SCOPUS:68349154812

SN - 1530-437X

VL - 9

SP - 87

EP - 92

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 2

M1 - 4749393

ER -

AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

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AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer