AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Xinke Liu; Hong Gu; Kuilong Li; Lunchun Guo; Deliang Zhu; Youming Lu; Jianfeng Wang; Hao-Chung Kuo; Zhihong Liu; Wenjun Liu; Lin Chen; Jianping Fang; Kah Wee Ang; Ke Xu; Jin Ping Ao

doi:10.1063/1.4999810

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Xinke Liu, Hong Gu, Kuilong Li, Lunchun Guo, Deliang Zhu, Youming Lu, Jianfeng Wang, Hao-Chung Kuo, Zhihong Liu, Wenjun Liu, Lin Chen, Jianping Fang, Kah Wee Ang, Ke Xu, Jin Ping Ao

光電工程學系

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼10⁴-10⁵ cm^-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μ_eff of ∼1456 cm²V^-1s^-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

原文	English
文章編號	095305
頁（從 - 到）	1-7
頁數	7
期刊	AIP Advances
卷	7
發行號	9
DOIs	https://doi.org/10.1063/1.4999810
出版狀態	Published - 1 9月 2017

存取文件

10.1063/1.4999810

其它文件與鏈接

Link to publication in Scopus

引用此

@article{d1c055645865473cb27f4317dad79770,

title = "AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer",

abstract = "This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.",

author = "Xinke Liu and Hong Gu and Kuilong Li and Lunchun Guo and Deliang Zhu and Youming Lu and Jianfeng Wang and Hao-Chung Kuo and Zhihong Liu and Wenjun Liu and Lin Chen and Jianping Fang and Ang, {Kah Wee} and Ke Xu and Ao, {Jin Ping}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = sep,

day = "1",

doi = "10.1063/1.4999810",

language = "English",

volume = "7",

pages = "1--7",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AU - Liu, Xinke

AU - Gu, Hong

AU - Li, Kuilong

AU - Guo, Lunchun

AU - Zhu, Deliang

AU - Lu, Youming

AU - Wang, Jianfeng

AU - Kuo, Hao-Chung

AU - Liu, Zhihong

AU - Liu, Wenjun

AU - Chen, Lin

AU - Fang, Jianping

AU - Ang, Kah Wee

AU - Xu, Ke

AU - Ao, Jin Ping

PY - 2017/9/1

Y1 - 2017/9/1

N2 - This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

AB - This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

UR - http://www.scopus.com/inward/record.url?scp=85029151053&partnerID=8YFLogxK

U2 - 10.1063/1.4999810

DO - 10.1063/1.4999810

M3 - Article

AN - SCOPUS:85029151053

SN - 2158-3226

VL - 7

SP - 1

EP - 7

JO - AIP Advances

JF - AIP Advances

IS - 9

M1 - 095305

ER -

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

摘要

存取文件

其它文件與鏈接

指紋

引用此