AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

原文English
文章編號7569098
頁(從 - 到)1395-1398
頁數4
期刊Ieee Electron Device Letters
37
發行號11
DOIs
出版狀態Published - 11月 2016

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