摘要
The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.
原文 | English |
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文章編號 | 7569098 |
頁(從 - 到) | 1395-1398 |
頁數 | 4 |
期刊 | Ieee Electron Device Letters |
卷 | 37 |
發行號 | 11 |
DOIs | |
出版狀態 | Published - 11月 2016 |