AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Yen Ku Lin; Shuichi Noda; Hsiao Chieh Lo; Shih Chien Liu; Chia Hsun Wu; Yuen Yee Wong; Quang Ho Luc; Po Chun Chang; Heng-Tung Hsu; Seiji Samukawa; Edward Yi Chang

doi:10.1109/LED.2016.2609938

AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang^*

^*此作品的通信作者

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I_DS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f_T) of 153 GHz, a maximum frequency of oscillation (f_MAX) of 167 GHz, and a minimum noise figure (NF_min) of 3.28 dB with an associated gain (G_AS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

原文	English
文章編號	7569098
頁（從 - 到）	1395-1398
頁數	4
期刊	IEEE Electron Device Letters
卷	37
發行號	11
DOIs	https://doi.org/10.1109/LED.2016.2609938
出版狀態	Published - 1 11月 2016

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title = "AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications",

abstract = "The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.",

keywords = "AlGaN/GaN, gate recess, HEMT, high frequency measurement, neutral beam etching",

author = "Lin, {Yen Ku} and Shuichi Noda and Lo, {Hsiao Chieh} and Liu, {Shih Chien} and Wu, {Chia Hsun} and Wong, {Yuen Yee} and Luc, {Quang Ho} and Chang, {Po Chun} and Heng-Tung Hsu and Seiji Samukawa and Chang, {Edward Yi}",

year = "2016",

month = nov,

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doi = "10.1109/LED.2016.2609938",

language = "English",

volume = "37",

pages = "1395--1398",

journal = "IEEE Electron Device Letters",

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T1 - AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

AU - Lin, Yen Ku

AU - Noda, Shuichi

AU - Lo, Hsiao Chieh

AU - Liu, Shih Chien

AU - Wu, Chia Hsun

AU - Wong, Yuen Yee

AU - Luc, Quang Ho

AU - Chang, Po Chun

AU - Hsu, Heng-Tung

AU - Samukawa, Seiji

AU - Chang, Edward Yi

PY - 2016/11/1

Y1 - 2016/11/1

N2 - The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

AB - The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

KW - AlGaN/GaN

KW - gate recess

KW - HEMT

KW - high frequency measurement

KW - neutral beam etching

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DO - 10.1109/LED.2016.2609938

M3 - Article

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SP - 1395

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

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