AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes With Varied Thickness of Sidewall Passivation via Atomic Layer Deposition

Kangwei Peng, Shouqiang Lai, Mengchun Shen, Saijun Li, Lijie Zheng, Yurong Dai, Jilan Chen, Lihong Zhu, Guolong Chen, Shuli Wang, Hao Chun Kuo, Yijun Lu, Zhong Chen*, Tingzhu Wu*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, we fabricated deep-ultraviolet light-emitting diodes (DUV-LEDs) with Al2O3 films of 0-, 130-, and 255-nm via atomic layer deposition (ALD). In addition, the effects of the passivation layers on the DUV-LEDs were systematically investigated. The current-voltage characteristics of these samples revealed the passivating effect of the Al2O3 ALD films on the DUV-LEDs. By analyzing the external quantum efficiency (EQE) at room temperature using the ABC + f,(n) model, the differences in the physical mechanisms of the Al2O3 ALD film on DUV-LEDs were determined. The measurements of the electroluminescence (EL) and far-field radiation patterns (EQE, light output power (LOP), and radiation patterns) showed that ALD can enhance the performance of DUV-LEDs, particularly DUV-LEDs with a 130-nm Al2O3 ALD passivation layer. Moreover, the aging test and failure ratio of these DUV-LEDs under humidity exposure (85 °C/85% RH) indicated the specific effect of these Al2O3 ALD films on the reliability of DUV-LEDs.

原文English
頁(從 - 到)5727-5731
頁數5
期刊IEEE Transactions on Electron Devices
70
發行號11
DOIs
出版狀態Published - 1 11月 2023

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