AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm

S. C. Huang; H. L. Chang; Kuan-Wei Su; Yung-Fu Chen; K. F. Haung

doi:10.1117/12.803422

AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm

S. C. Huang, H. L. Chang, Kuan-Wei Su, Yung-Fu Chen, K. F. Haung

電子物理學系

研究成果: Conference article › 同行評審

摘要

We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

原文	English
文章編號	71351T
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	7135
DOIs	https://doi.org/10.1117/12.803422
出版狀態	Published - 2008
事件	Optoelectronic Materials and Devices III - Hangzhou, China 持續時間: 27 10月 2008 → 30 10月 2008

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title = "AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm",

abstract = "We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.",

author = "Huang, {S. C.} and Chang, {H. L.} and Kuan-Wei Su and Yung-Fu Chen and Haung, {K. F.}",

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doi = "10.1117/12.803422",

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T1 - AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm

AU - Huang, S. C.

AU - Chang, H. L.

AU - Su, Kuan-Wei

AU - Chen, Yung-Fu

AU - Haung, K. F.

PY - 2008

Y1 - 2008

N2 - We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

AB - We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

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DO - 10.1117/12.803422

M3 - Conference article

AN - SCOPUS:62649104830

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VL - 7135

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 71351T

T2 - Optoelectronic Materials and Devices III

Y2 - 27 October 2008 through 30 October 2008

ER -

AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm

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