AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm

S. C. Huang, H. L. Chang, Kuan-Wei Su, Yung-Fu Chen, K. F. Haung

研究成果: Conference article同行評審

摘要

We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

原文English
文章編號71351T
期刊Proceedings of SPIE - The International Society for Optical Engineering
7135
DOIs
出版狀態Published - 1 十二月 2008
事件Optoelectronic Materials and Devices III - Hangzhou, China
持續時間: 27 十月 200830 十月 2008

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