We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 1 十二月 2008|
|事件||Optoelectronic Materials and Devices III - Hangzhou, China|
持續時間: 27 十月 2008 → 30 十月 2008