AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Ray-Hua Horng*, D. S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

原文English
頁(從 - 到)154-156
頁數3
期刊Applied Physics Letters
75
發行號2
DOIs
出版狀態Published - 12 7月 1999

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