AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Ray-Hua Horng; D. S. Wuu; S. C. Wei; M. F. Huang; K. H. Chang; P. H. Liu; K. C. Lin

doi:10.1063/1.124303

AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

Ray-Hua Horng^*, D. S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m² at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

原文	English
頁（從 - 到）	154-156
頁數	3
期刊	Applied Physics Letters
卷	75
發行號	2
DOIs	https://doi.org/10.1063/1.124303
出版狀態	Published - 12 7月 1999

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abstract = "The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.",

author = "Ray-Hua Horng and Wuu, {D. S.} and Wei, {S. C.} and Huang, {M. F.} and Chang, {K. H.} and Liu, {P. H.} and Lin, {K. C.}",

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AU - Horng, Ray-Hua

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AU - Wei, S. C.

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AU - Chang, K. H.

AU - Liu, P. H.

AU - Lin, K. C.

PY - 1999/7/12

Y1 - 1999/7/12

N2 - The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

AB - The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

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AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

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