AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

S. C. Huang; H. L. Chang; Kuan-Wei Su; A. Li; S. C. Liu; Yung-Fu Chen; Kai-Feng Huang

doi:10.1007/s00340-008-3346-2

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO₄ laser

S. C. Huang, H. L. Chang, Kuan-Wei Su, A. Li, S. C. Liu, Yung-Fu Chen, Kai-Feng Huang

電子物理學系

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

原文	English
頁（從 - 到）	483-487
頁數	5
期刊	Applied Physics B: Lasers and Optics
卷	94
發行號	3
DOIs	https://doi.org/10.1007/s00340-008-3346-2
出版狀態	Published - 3月 2009

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10.1007/s00340-008-3346-2

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abstract = "An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.",

author = "Huang, {S. C.} and Chang, {H. L.} and Kuan-Wei Su and A. Li and Liu, {S. C.} and Yung-Fu Chen and Kai-Feng Huang",

year = "2009",

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doi = "10.1007/s00340-008-3346-2",

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AU - Huang, S. C.

AU - Chang, H. L.

AU - Su, Kuan-Wei

AU - Li, A.

AU - Liu, S. C.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

PY - 2009/3

Y1 - 2009/3

N2 - An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

AB - An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

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U2 - 10.1007/s00340-008-3346-2

DO - 10.1007/s00340-008-3346-2

M3 - Article

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SN - 0946-2171

VL - 94

SP - 483

EP - 487

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

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AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO₄ laser