AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser

S. C. Huang; S. C. Liu; A. Li; Kuan-Wei Su; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/OL.32.001480

AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser

S. C. Huang, S. C. Liu, A. Li, Kuan-Wei Su, Yung-Fu Chen^*, Kai-Feng Huang

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電子物理學系

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15 引文斯高帕斯（Scopus）

摘要

We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 μm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained.

原文	English
頁（從 - 到）	1480-1482
頁數	3
期刊	Optics Letters
卷	32
發行號	11
DOIs	https://doi.org/10.1364/OL.32.001480
出版狀態	Published - 1 6月 2007

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AU - Liu, S. C.

AU - Li, A.

AU - Su, Kuan-Wei

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

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AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser

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