AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser

S. C. Huang, Kuan-Wei Su, A. Li, S. C. Liu, Yung-Fu Chen, K. F. Hunag

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO41.06-μm laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.

原文English
主出版物標題Solid State Lasers XVII
主出版物子標題Technology and Devices
DOIs
出版狀態Published - 2008
事件Solid State Lasers XVII: Technology and Devices - San Jose, CA, United States
持續時間: 20 1月 200824 1月 2008

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6871
ISSN(列印)0277-786X

Conference

ConferenceSolid State Lasers XVII: Technology and Devices
國家/地區United States
城市San Jose, CA
期間20/01/0824/01/08

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