@inproceedings{c9d6330bacbb44a79ce579a54d0fb47c,
title = "AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser",
abstract = "We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO41.06-μm laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.",
keywords = "AlGaInAs, High-peak power, VECSEL",
author = "Huang, {S. C.} and Kuan-Wei Su and A. Li and Liu, {S. C.} and Yung-Fu Chen and Hunag, {K. F.}",
year = "2008",
doi = "10.1117/12.762962",
language = "English",
isbn = "9780819470461",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Solid State Lasers XVII",
note = "Solid State Lasers XVII: Technology and Devices ; Conference date: 20-01-2008 Through 24-01-2008",
}