@article{fdb199e4e8ae499da047d6914e195464,
title = "AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy",
abstract = "The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.",
keywords = "Bipolar transistors, Molecular beam epitaxy, Semiconductor devices and materials",
author = "Sullivan, {G. J.} and Asbeck, {P. M.} and Mau-Chung Chang and Miller, {D. L.} and Wang, {K. C.}",
year = "1986",
month = jan,
day = "1",
doi = "10.1049/el:19860286",
language = "English",
volume = "22",
pages = "419--421",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "8",
}