AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

G. J. Sullivan, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, K. C. Wang

    研究成果: Article同行評審

    13 引文 斯高帕斯(Scopus)

    摘要

    The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.

    原文English
    頁(從 - 到)419-421
    頁數3
    期刊Electronics Letters
    22
    發行號8
    DOIs
    出版狀態Published - 1 1月 1986

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