Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Mau-Chung Chang; P. M. Asbeck; K. C. Wang; G. J. Sullivan; D. L. Miller

doi:10.1049/el:19860803

Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Mau-Chung Chang, P. M. Asbeck, K. C. Wang, G. J. Sullivan, D. L. Miller

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21 引文斯高帕斯（Scopus）

摘要

Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

原文	English
頁（從 - 到）	1173-1174
頁數	2
期刊	Electronics Letters
卷	22
發行號	22
DOIs	https://doi.org/10.1049/el:19860803
出版狀態	Published - 1 1月 1986

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abstract = "Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.",

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AU - Sullivan, G. J.

AU - Miller, D. L.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

AB - Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

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KW - Semiconductor devices and materials

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ER -

Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

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