Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Mau-Chung Chang, P. M. Asbeck, K. C. Wang, G. J. Sullivan, D. L. Miller

    研究成果: Article同行評審

    21 引文 斯高帕斯(Scopus)

    摘要

    Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

    原文English
    頁(從 - 到)1173-1174
    頁數2
    期刊Electronics Letters
    22
    發行號22
    DOIs
    出版狀態Published - 1 1月 1986

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